| PART |
Description |
Maker |
| M28F101 M28F101-120K3 M28F101-120P3 M28F101-120XP3 |
Octal Buffers/Drivers With 3-State Outputs 20-SOIC 0 to 70
1-Of-16 Data Generators/Multiplexers With 3-State Outputs 24-PDIP 0 to 70
Octal Bus Transceivers With 3-State Outputs 20-SO 0 to 70
Octal Buffers/Drivers With 3-State Outputs 20-SO 0 to 70
Octal Bus Transceivers With 3-State Outputs 20-PDIP 0 to 70
1 Mb 128K x 8/ Chip Erase FLASH MEMORY
1 Mb 128K x 8, Chip Erase FLASH MEMORY 1 MB128K的8，芯片擦除闪
1 Mb 128K x 8, Chip Erase FLASH MEMORY 1 MB28K的8，芯片擦除闪
1-Of-16 Data Generators/Multiplexers With 3-State Outputs 24-SOIC 0 to 70 1 MB28K的8，芯片擦除闪
Octal Bus Transceivers With 3-State Outputs 20-SOIC 0 to 70 1 MB128K的8，芯片擦除闪
Quadruple 2-Line to 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
|
意法半导
STMicroelectronics N.V.
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| 28F256 M28F256-90C1TR M28F256-90C3TR M28F256-90C6T |
Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC 0 to 70 256K2K的8，芯片擦除）闪存
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP 0 to 70 256K32K的8，芯片擦除）闪存
256K(32K x8, Chip Erase)FLASH MEMORY 256K2K的8，芯片擦除）闪存
KAPTON STRAP F/GLASS TUBE PKG/5
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC 0 to 70
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP 0 to 70
256K(32K x8 / Chip Erase)FLASH MEMORY
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| LC87F14C8A |
CMOS IC FROM 128K byte, RAM 10K byte on-chip 8-bit 1-chip Microcontroller with USB-host controller
|
Sanyo Semicon Device
|
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| ENA1156 |
CMOS IC FROM 128K byte, RAM 4K byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
Gate Driver; Package: PG-DSO-8; RthJA (max): -;
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位）的CMOS 3.0伏特，只有扇区擦除闪
CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位）的CMOS 3.0伏特，只有扇区擦除闪
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
|
Mitsubishi Electric Corporation
|
| DS5001FP05 |
128k Soft Microprocessor Chip
|
Dallas Semiconductor
|
| AT27C010-15DI AT27C010-45TIT/R AT27C010-90KM AT27C |
128K X 8 UVPROM, 150 ns, CDIP32
128K X 8 OTPROM, 45 ns, PDSO32
128K X 8 UVPROM, 90 ns, CQCC32
128K X 8 UVPROM, 55 ns, CDIP32
|
ATMEL CORP
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
